Surface morphology

Surface morphology

High removal rate of new hard mask materials
  • W doped ACL : 6000Å/min
  • B doped ACL : 5000Å/min

Good selectivity against dielectric materials
  • SiO2 : ≒400:1 (W-doped)
               ≒300:1(B-doped)
  • Si3N4 :≥700:1 (W-doped)
                ≥500:1(B-doped)